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李京波教授

2015/05/02 10:33:13人浏览

李京波     LIJINGBO    教授

所属学院:

材料与能源学院

导师类别:

博士生导师、硕士生导师

科研方向:

光电材料与器件、二维材料与纳米器件、高能量激光、先进装备集成与研发

联系方式:

jbli@semi.ac.cn

博士招生学院

材料与能源学院

硕士招生学院:

材料与能源学院

个人简述

(300)

李京波教授,博士生导师,“国家杰出青年基金”和中组部“万人计划”获得者。2001年毕业于中国科学院半导体研究所,获得理学博士学位;2001年至2004年,在美国伯克利劳伦斯国家实验室做博士后;2004年至2007年,美国再生能源国家实验室助理研究员;20075月,入选中国科学院“百人计划”,同时进入半导体超晶格国家重点实验室工作,从事半导体掺杂机制和纳米材料的研究;201512月起任广东工业大学先进装备与光电技术研究所所长。在半导体掺杂机制和纳米材料等前沿领域中取得的一系列创新性研究成果:(1)发表了180余篇论文,其中包括NatureNature MaterialsNature Comm. PRLNano LettersJACS APL/PRB 上发表超过80篇论文。被国际同行引用超过6000次,最高单篇引用超过800次,单篇被引用超过100次的论文有12,获授权发明专利12项,对半导体光电材料与器件的设计有重要的指导作用。(2)首次从理论上研究了形状对纳米团簇电子态的影响,并且对相关的实验进行了解释。(3)与合作者提出了Charge Patching方法,实现了上万原子的第一性原理精度计算,该方法特别适用于大原胞的半导体合金和纳米团簇的大规模计算。(4)对半导体掺杂机制有深入的研究,提出GaNZnO等实现p-型掺杂的实验模型,并用第一性原理进行计算,获得国际同行的广泛关注。(5)首次研究了量子点中杂质的稳定性, 预言在硅掺杂的GaAs量子点中,如量子点的尺寸小于14纳米,将出现DX深能级中心。(6)首次预言了CdS量子点比CdSe量子点更容易观察到“暗激子现象”,该预言被美国P.F.Barbara教授的实验小组所证实。论文已经被国际同行高度评价和大量引用,至今已被引用两千余次。200892日《科技日报》第十版以《李京波:半导体照明学科带头人》为题报道了李京波研究员的最新研究进展。2009317日《自然》(亚洲材料)报道了李京波小组在光催化材料研究中取得的重要进展。2009年获国家杰出青年基金(信息学部);2011年,浙江省“千人计划”荣誉称号(企业创新类);2014年,获科技部中青年科技创新领军人才称号;2015年起,享受国务院政府特殊津贴;2016年获中组部第二批“万人计划”领军人才称号。

学科领域

科学学位:材料科学与工程/微电子学与固体电子学

专业学位:材料工程

教育背景

2001.9-2004.9   美国伯克利劳伦斯国家实验室博士后。

2004.9-2007.7  美国再生能源国家实验室助理研究员。

2007.7    中国科学院半导体研究所研究员、博士生导师。

2015.12至今   广东工业大学先进装备与光电技术研究所所长

工作经历

中国科学院半导体研究所学术委员会委员、学位委员会委员;

中国科学院大学岗位教授;

中国物理学会“发光学会”学术委员会委员;

中国科学院“青年联合会”委员;

清华大学兼职博士生导师;

国际权威杂志NaturePRLPRBNano LettersJPCACS NanoNanoscaleAdv Mater等特约审稿人。

主要荣誉

2016年,获中组部人计划领军人才;

2015年,享受国务院政府特殊津贴;

2014年,获科技部中青年科技创新领军人才;

2013年,杰青终期评估优秀

2012年,百人计划终期评估获评优秀

2011年,浙江省千人计划荣誉称号(企业创新类);

2009年,获国家杰出青年基金(信息学部);

2007年,入选中国科学院百人计划

1998年,获广东省高校科技进步二等奖。

主要论文

2007年以来发表代表性论文如下(*为通讯作者):

[1]  S. Yang, C. Wang, H. Sahin, H. Chen, Y.  Li, S. Li, A. Suslu, F. Peeters, Q. Liu*, Jingbo Li*, S. Tongay*, Tuning the Optical, Magnetic, and  Electrical Properties of ReSe2 by Nanoscale Strain Engineering, Nano Letters, 15,1660 (2015).

[2]   B. Li,  L. Huang, M. Zhong, N. J. Huo, Y. T. Li, S. Yang, C. Fan, J. Yang, W. P. Hu,  Z. M. Wei* and Jingbo Li*, “Synthesis and Transport Properties of Large-Scale  Alloy Co0.16Mo0.84S2 Bilayer Nanosheets”, ACS Nano, 9,1257 (2015).

[3]   N. J.  Huo, J. H. Yang, L. Huang, Z. M. Wei, S.-S. Li, S.-H. Wei,* and Jingbo Li.*,  “Tunable Polarity Behavior and Self-Driven Photoswitching in p-WSe2/n-WS2  Heterojunctions”, Small, (2015), online, DOI: 10.1002/smll.201501206.

[4]   J. H.  Yang, N. J. Huo, Y. Li, X.-W. Jiang, T. Li, R. X. Li, F. Y. Lu, C. Fan, B.  Li, Kasper Nørgaard, B. W. Laursen, Z. M.  Wei,* Jingbo Li,* and S.-S. Li, “Gate-Tunable Ultra-High Photoresponsivity of  2D Heterostructures based on Few Layer MoS2 and Solution-Processed rGO”, Adv.  Electron. Mater., (2015), accepted, DOI: 10.1002/aelm.201500267.

[5]   L.  Huang, N. J. Huo, Y. Li, H. Chen, J. H. Yang, Z. M. Wei,* Jingbo Li,* and  S.-S. Li, “Electric-Field Tunable Band Offsets in Black Phosphorus and MoS2  van der Waals p-n Heterostructure”, J. Phys. Chem. Lett., 6, 2483 (2015).

[6]   F. Lu,  J. H. Yang, R. X. Li, N. J. Huo, Y. T. Li, Z. M. Wei* and Jingbo Li*,  “Gas-dependent photoresponse of SnS nanoparticles-based photodetectors”, J.  Mater. Chem. C, 3, 1397 (2015).

[7]   N. J.  Huo, Z. M. Wei, X. Meng, J. Kang, F. Wu, S.-S. Li, S.-H. Wei,* Jingbo Li*,  “Interlayer coupling and optoelectronic properties of ultrathin  two-dimensional heterostructures based on graphene, MoS2 and WS2”, J. Mater.  Chem. C, 3, 5467 (2015).

[8]   F. Lu,  R. X. Li, Y. Li, N. J. Huo, J. H. Yang, Y. T. Li, B. Li, S. X. Yang, Z. M.  Wei* and Jingbo Li*, “Improving the Field-Effect Performance of Bi2S3 Single  Nanowires by an Asymmetric Device Fabrication”, ChemPhysChem, 16, 99 (2015).

[9]   Z. M.  Zhong, Z. M. Wei*, X. Q. Meng, F. M. Wu, Jingbo Li*, “Ultra-sensitive  humidity sensors based on ZnSb2O4 nanoparticles”, RSC Adv., 5, 2429 (2015).

[10]S.  Tongay, H. Sahin, C. Ko, A. Luce, W. Fan, K. Liu, J. Zhou, Y. S. Huang, C. H.  Ho, J. Yan, D. F. Ogletree, S. Aloni, J. Ji, S. S. Li, Jingbo Li, F. M.  Peeters, and J. Wu*, “Monolayer behaviour in bulk ReS2 due to electronic and  vibrational decoupling”, Nature Communications, 5,3252 (2014).

[11]N. J.  Huo, J. Kang, Z. M. Wei, S. S. Li, Jingbo Li* and S. H. Wei*, “Novel and Enhanced  Optoelectronic Performances of Multilayer MoS2-WS2 Heterostructure  Transistors”, Adv. Funct. Mater., 24, 7025 (2014).

[12]N. J.  Huo, S. X. Yang, Z. M. Wei, S. S. Li, J. B. Xia, Jingbo Li*, “Photoresponsive  and Gas Sensing Field-Effect Transistors based on Multilayer WS2 Nanoflakes”,  Scientific Reports, 4, 5209 (2014).

[13]S. X.  Yang, Y. Li, X. Z. Wang, N. J. Huo, J. B. Xia, S. S. Li, Jingbo Li*, “High  performance few-layer GaS photodetector and its unique photo-response in  different gas environments”, Nanosale, 6, 2582 (2014).

[14]S. X.  Yang, S. Tongay, Y. Li, Q. Yue, J. B. Xia, S. S. Li, Jingbo Li* and S. H.  Wei*, “Layer-dependent electrical and optoelectronic responses of ReSe2  nanosheet transistors”, Nanosale, 6, 7226 (2014).

[15]C. Fan,  T. Li, Z. M. Wei*, N. J. Huo, F. Lu, J. H. Yang, R. X. Li, S. X. Yang, B. Li,  W. P. Hu*, Jingbo Li*, “Novel Micro-Rings of MoS2”, Nanosale, 6, 14652  (2014).

[16]J. H.  Yang, F. Lu, Y. Li, S. X. Yang, R. X. Li, N. J. Huo, C. Fan, Z. M. Wei*,  Jingbo Li*, S. S. Li, “Low temperature electrical transport and  photoresponsive properties of H-doped MoO3 nanosheets” , J. Mater. Chem. C,  2, 1034 (2014).

[17]N. J.  Huo, Y. Li, J. Kang, R. Li, Q. Xia, Jingbo Li*, “Edge-states ferromagnetism  of WS2 nanosheets”, Appl. Phys. Lett., 104, 202406 (2014).

[18]C. Fan,  Q. Yue, J. H. Yang, Z. M. Wei*, S. X. Yang, Jingbo Li*, “Low temperature  electrical and photo-responsive properties of MoSe2”, Appl. Phys. Lett., 104,  202105 (2014).

[19]Z. H.  Chen, X. W. Jiang, S. Dong, Jingbo Li*, S. S. Li, L. W. Wang, “Insight into the  photoelectron angular dependent energy distribution of  negative-electron-affinity InP photocathodes”, Appl. Phys. Lett., 104, 021120  (2014).

[20]S.  Tongay, D. S. Narang, J. Kang, W. Fan, C. Ko, A. V. Luce, K. X. Wang, J. Suh,  K. D. Patel, V. M. Pathak, Jingbo Li, J. Wu*, “Two-dimensional semiconductor  alloys: Monolayer Mo1-xWxSe2”, Appl. Phys. Lett., 104, 012101 (2014).

[21]Y. Li,  S. X. Yang, Jingbo Li*, “Modulation of the Electronic Properties of Ultrathin  Black Phosphorus by Strain and Electrical Field”, J. Phys. Chem. C., 118,  23970 (2014).

[22]Z. H.  Chen, Jingbo Li*, S. S. Li, L. W. Wang, “Approximate Hessian for accelerating  ab initio structure relaxation by force fitting”, Phys. Rev. B 89, 144110  (2014).

[23]R. X.  Li, J. H. Yang, N. J. Huo, C. Fan, F. Lu, T. Yan, Z. M. Wei*, Jingbo Li*,  “Effect of Electrical Contact on the Performance of Bi2S3 Single Nanowire  Photodetectors”, ChemPhysChem, 15, 2510 (2014).

[24]Y. Li,  J. Kang, Jingbo Li*, “Indirect-to-direct band gap transition of ZrS2  monolayer by strain: first-principles calculations”, RSC Adv., 4, 7396  (2014).

[25]J. H.  Yang, R. X. Li, N. J. Huo, W. L. Ma, F. Lu, C. Fan, S. X. Yang, Z. M. Wei*,  Jingbo Li*, and S. S. Li, “Oxygen-induced abnormal photoelectric behavior of  a MoO3/graphene heterocomposite”, RSC Adv., 4, 49873 (2014).

[26]F. Y.  Lu, R. Li, N. J. Huo, J. Yang, C. Fan, X. Z. Wang, S. X. Yang*, Jingbo Li*,  “Synthesis of the Bi2S3-Bi2O3 composites and their enhanced photosensitive  property”, RSC Adv., 4, 5666 (2014).

[27]C. Fan,  Z. M. Wei*, S. X. Yang, Jingbo Li*, “Synthesis of MoSe2 flower-like  nanostructures and its photo-responsive properties”, RSC Adv., 4, 775 (2014).

[28]J. Kang,  Jingbo Li, S. S. Li, J. B. Xia, and L.-W. Wang*, “Electronic structural Moiré  pattern effects on MoS2/MoSe2 2D heterostructures”, Nano Letters, 13, 5485  (2013).

[29]S.  Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R.  Raghunathanan, J. Zhou, F. Ogletree,, Jingbo Li, J. Grossman, and J. Wu*,  “Defects activated photoluminescence in two-dimensional semiconductors:  interplay between bound, charged, and free excitons”, Scientific Reports, 3,  2657 (2013).

[30]S.  Tongay, J. Zhou, C. Ataca, J. Liu, J. Kang, T. Matthews, L. You, Jingbo Li,  J. Grossman, and J. Wu*, “Broad-range modulation of light emission in  two-dimensional semiconductors by molecular physi-sorption gating”, Nano  Letters, 13, 2831 (2013).

[31]X. Q.  Meng, S. Tongay, J. Kang, Z. H. Chen, F. M. Wu, S. S. Li, J. B. Xia, Jingbo  Li*, and J. Wu*, “Stable p- and n-type doping of few-layer  graphene/graphite”, Carbon, 57, 507 (2013).

[32]J. Kang,  S. Tongay, J. Zhou, Jingbo Li*, and J. Wu*, “Band offsets and  Heterostructures of Two-Dimensional Semiconductors”, Appl. Phys. Lett., 102,  012111 (2013).

[33]H. F.  Dong, Z. G. Wu*, S. Wang, W. F. Duan, Jingbo Li*, “Improving the optical  absorption of BiFeO3 for photovoltaic applications via uniaxial compression  or biaxial tension”, Appl. Phys. Lett., 102, 072905 (2013).

[34]H. F.  Dong, C. Q. Chen, S. Wang, W. F. Duan, Jingbo Li*, “Elastic properties of  tetragonal BiFeO3 from first-principles calculations”, Appl. Phys. Lett.,  102, 182905 (2013).

[35]H. W.  Peng, Jingbo Li*, S. H. Wei, “Chemical trends of magnetic interaction in  Mn-doped III-V semiconductors”, Appl. Phys. Lett., 102, 122409 (2013).

[36]S. X.  Yang, S. Tongay, S. S. Li, J. B. Xia, J. Wu*, Jingbo Li*, “Environmentally  Stable / Self-powered UV Photodetectors with High Sensitivity”, Appl. Phys.  Lett., 103, 143503 (2013).

[37]X. Q.  Meng, Z. H. Chen, Z. Chen, F. M. Wu, S. S. Li, Jingbo Li*, J. Wu, S.-H. Wei*,  “Enhancing Structural Transition by Carrier and Quantum Confinement:  Stabilization of Cubic InN Quantum Dots by Mn Incorporation”, Appl. Phys.  Lett., 103, 253102 (2013).

[38]Z. H.  Chen, X. W. Jiang, Jingbo Li*, S. S. Li, “A sphere-cut-splice crossover for  the evolution of cluster structures”, J. Chem. Phys., 138, 214303 (2013).

[39]C. Li,  S. X. Yang*, S. S. Li, J. B. Xia, and Jingbo Li*, “Au Decorated Silicene:  Design of High Activity Catalyst toward CO Oxidation”, J. Phys. Chem. C, 117,  483 (2013).

[40]H. X.  Deng, S.-H. Wei, S. S. Li, Jingbo Li, A. Walsh, “Electronic origin of the  conductivity imbalance between covalent and ionic amorphous semiconductors”,  Phys. Rev. B, 87, 125203 (2013).

[41]H.  Sahin, S. Tongay, S. Horzum, W. Fan, Zhou, Jingbo Li, J. Wu, and F. M.  Peeters “Anomalous Raman spectra and thickness-dependent electronic  properties of WSe2”, Phys. Rev. B, 87, 165409 (2013).

[42]N. J.  Huo, S. X. Yang*, Z. M. Wei, Jingbo Li*, “Synthesis of WO3 nanostructures and  their ultraviolet photo-response property”, J. Mater. Chem. C, 1, 3999  (2013).

[43]Q. Yue,  S. L. Chang, J. Kang, S. Q. Qin, and Jingbo Li*, “Mechanical and Electronic  Properties of Graphyne and Its Family Under Elastic Strain: Theoretical  Predictions”, J. Phys. Chem. C, 117, 14804 (2013).

[44]N. J.  Huo, Q. Yue, J. H. Yang, S. X. Yang*, Jingbo Li*, “Abnormal Photocurrent  Response and Enhanced Photocatalytic Activity Induced by Charge Transfer  between WS2 Nanosheets and WO3 Nanoparticles”, ChemPhysChem, 14, 4069 (2013).

[45]X. Z.  Wang, X. Q. Meng, Z. M. Zeng, F. M. Wu, Jingbo Li*, Hydrothermal synthesis of  WO3·0.5H2O microtubes with excellent photocatalytic properties, Appl. Surf.  Sci, 282, 826 (2013).

[46]M. Z.  Zhong, X. Q. Meng*, F. M. Wu, Jingbo Li*, Y. Fang, “Mo-doping-enhanced dye  absorption of Bi2Se3 nanoflowers”, Nanoscale Res. Lett., 8, 451 (2013).

[47]Q. Yue,  Z. Z. Shao, S. L. Chang, Jingbo Li*, “Adsorption of gas molecules on  monolayer MoS2 and effect of applied electric field”, Nanoscale Res. Lett.,  8, 425 (2013).

[48]S.  Tongay, J. Zhou, C. Ataca, K. Lo, T. S. Matthews, Jingbo Li, J. C. Grossman,  and J. Wu*, “Thermally Driven Crossover from Indirect toward Direct Bandgap  in 2D Semiconductors: MoSe2 versus MoS2”, Nano Letters, 12, 5576 (2012).

[49]J. Kang,  F. M. Wu, S. S. Li, J. B. Xia, and Jingbo Li*, “Antiferromagnetic coupling  and spin filtering in asymmetrically hydrogenated graphene nanoribbon  homojunction”, Appl. Phys. Lett., 100, 153102 (2012).

[50]J. Kang,  F. M. Wu, and Jingbo Li*, “Symmetry-Dependent Transport Properties and  Magnetoresistance in Zigzag Silicene Nanoribbons”, Appl. Phys. Lett., 100,  233122 (2012).

[51]C. Li,  Jingbo Li*, S. S. Li, J. B. Xia, and S.-H. Wei*, “Selection rule of preferred  doping site for n-type oxides ”, Appl. Phys. Lett., 100, 262109 (2012).

[52]C. Li,  F. M. Wu, S. S. Li, J. B. Xia, and Jingbo Li*, “Influence of indium cluster  on the high and constant background electron density in ternary InxGa1-xN  alloys”, Appl. Phys. Lett., 101, 062102 (2012).

[53]H. X.  Deng, S. S. Li, Jingbo Li, S.-H. Wei, “Effect of hydrogen passivation on the  electronic structure of ionic semiconductor nanostructures ”, Phys. Rev. B,  85, 195328 (2012).

[54]Q. Yue,  S. L. Chang, J. Kang, J. Tan, S. Q. Qian, and Jingbo Li*, “Symmetry-dependent  transport properties and bipolar spin-filtering in zigzag α-graphyne  nanoribbons”, Phys. Rev. B, 86, 2354488 (2012).

[55]Q. Yue,  S. L. Cheng, J. Kang, J. C. Tan, S. Q. Qin, and Jingbo Li*, “Magnetic and  electronic properties ofα-graphdyne nanoribbons”, J. Chem. Phys., 136, 244702  (2012).

[56]J. Kang,  F. M. Wu, S. S. Li, J.-B. Xia, and Jingbo Li*, “Calculating Band Alignment  between Materials with Different Structures: The case of Anatase and Rutile  Titanium Dioxide”, J. Phys. Chem. C, 116, 20765 (2012).

[57]C. Li,  F. M. Wu, Jingbo Li*, and L.-W. Wang, “Self-Assembled Ti Quantum Wire on  Zigzag Graphene Nanoribbons with One Edge Saturated”, J. Phys. Chem. C, 116,  24824 (2012).

[58]J. Wang,  S. S. Li, Y. Liu*, and Jingbo Li*, “Passivation of CuI Quantum Dots”, J.  Phys. Chem. C, 116, 21039 (2012).

[59]J. Kang,  F. M. Wu, and Jingbo Li*, “Doping induced spin filtering effect in zigzag  graphene nanoribbons with asymmetric edge hydrogenation”, Appl. Phys. Lett.,  98, 083109 (2011).

[60]W. Chen  and Jingbo Li*, “Origin of the low thermal conductivity of the thermoelectric  material β-Zn4Sb3: An ab initio theoretical study”, Appl. Phys. Lett., 98,  241901(2011).

[61]C. Li,  F. M. Wu, and Jingbo Li*, “Kinetic and relativistic effects on the surface  alloy formation of Au adsorbed on Si(111)-Pb surface”, Appl. Phys. Lett., 99,  211912 (2011).

[62]M. Q.  Meng, F. M. Wu, and Jingbo Li*, “Study on optical properties of type-II  SnO2/ZnO core/shell nanowires”, J. Phys. Chem. C, 115, 7225 (2011).

[63]J. Kang,  Jingbo Li*, F. M. Wu, S. S. Li, J. B. Xia, L. W. Wang, “Elastic, electronic  and optical properties of two-dimensional graphyne sheet”, J. Phys. Chem. C,  115, 20466 (2011).

[64]C. Li,  Jingbo Li*, F. M. Wu, S. S. Li and J. B. Xia “High Capacity Hydrogen Storage  in Ca Decorated Graphyne: A First-Principles Study”, J. Phys. Chem. C, 115,  23221 (2011).

[65]M. Wang,  Y. Wang, and Jingbo Li*, “ZnO nanowire arrays coating on TiO2 nanoparticles  as composite photoanode for a high efficiency DSSC”, Chem Comm., 47, 11246  (2011).

[66]M. Q.  Meng, H. W. Peng, Y. Q. Gai, and Jingbo Li*, “Influence of ZnS and MgO shell  on the photoluminescence properties of ZnO core/shell nanowires”, J. Phys.  Chem. C, 114, 1467 (2010).

[67]H. X.  Deng, S. S. Li, and Jingbo Li*, “Quantum Confinement Effects and Electronic  Properties of SnO2 Quantum Wires and Dots”, J. Phys. Chem. C, 114, 4841  (2010).

[68]M. Q.  Meng, L. M. Tang, and Jingbo Li*, “Room-Temperature Ferromagnetism in  Co-doped In2O3 Nanocrystals”, J. Phys. Chem. C, 114, 17569 (2010).

[69]H. X.  Deng, Jingbo Li*S. S. Li, J. B. Xia, L. W. Wang, and, S.-H. Wei, “Band crossing in  isovalent semiconductor alloys with large size mismatch: First-principles  calculations of the electronic structure of Bi and N incorporated GaAs”, Phys.  Rev. B, 82, 193204 (2010).

[70]L. X.  Zhang, X. F. Zhou, H. T. Wang, J. J. Xu, Jingbo Li, E. G. Wang, S.-H. Wei*,  “Origin of insulating behavior of the p-type LaAlO3/SrTiO3 interface:  Polarization-induced asymmetric distribution of oxygen vacancies”, Phys. Rev.  B 82, 125412 (2010).

[71]H. X.  Deng, Jingbo Li*S. S. Li, J. B. Xia, A. Walsh, and, S.-H. Wei*, “Origin of  antiferromagnetism in CoO: A density functional theory study”, Appl. Phys.  Lett. 96, 162508(2010).

[72]Z. G.  Wang*, Jingbo Li*, F. Gao, and W. J. Weber, “Codoping of magnesium with  oxygen in GaN nanowires”, Appl. Phys. Lett. 96, 103112 (2010).

[73]Z. G.  Wang*, Jingbo Li, F. Gao, W. J. Weber, “Charge Separation of  Wurtzite/Zinc-Blende Heterostructures in GaN Nanowires”, ChemPhysChem, 11,  3329 (2010).

[74]Z. G.  Wang*, C.L. Zhang, Jingbo Li, F. Gao, W. J. Weber, “First principles study of  electronic properties of gallium nitride nanowires grown along different  crystal directions”, Computational Materials Science, 50, 344 (2010).

[75]H. W.  Peng, H. J. Xiang, S. H. Wei*, S. S. Li, J. B. Xia, and Jingbo Li*, “Origin  and enhancement of hole-induced ferromagnetism in first-row d0  semiconductors”, Phys. Rev. Lett. 102, 017201 (2009).

[76]Y. Q.  Gai, Jingbo Li*, S. S. Li, J. B. Xia, and S. H. Wei*, “Design of narrow-gap  TiO2 for enhanced photoelectrochecmical activity: A passivated codoping  approach”, Phys. Rev. Lett. 102, 036402 (2009).

[77]H. W.  Peng, Jingbo Li*, S. S. Li, and J. B. Xia, “Possible origin of ferromagnetism  in undoped anatase TiO2”, Phys. Rev. B , 79, 092411 (2009).

[78]Z. G.  Wang*, F. Gao, Jingbo Li, X. T. Zu, and W. J. Weber “Controlling Electronic  Structures by Electron Irradiation in Single-walled SiC nanotubes: A first  Principles Molecular Dynamics Study”, Nanotechnology, 20, 075708 (2009).

[79]Z. G.  Wang*, S. Wang, Jingbo Li*, F. Gao*, and W. J. Weber “Structure and  electronic properties of saturated and unsaturated gallium nitride  nanotubes”, J. Phys. Chem. C, 113, 19281 (2009).

[80]Y. Q.  Gai, H. W. Peng, and Jingbo Li*, “Electronic Properties of Nonstoichiometric  PbSe Quantum Dot from Frst Principles”, J. Phys. Chem. C, 113,21506 (2009).

[81]Y. Q.  Gai, Jingbo Li*, S. S. Li, J. B. Xia, Y. Yan, S.-H. Wei*, “Design of shallow  acceptors in ZnO through compensated donor-acceptor complexes: A density  functional calculation”, Phys. Rev. B, 80, 153201 (2009).

[82]Y. H.  Li, A. Walsh, S. Chen, W. J. Yin, J. H. Yang, Jingbo Li, J. Da Silva, X. G.  Gong, and S-H. Wei*, “Revised ab initio nature band offsets of all group IV,  II-VI, and III-V semiconductors”, Appl. Phys. Lett. 94, 212109 (2009).

[83]L. X.  Zhang, J. L. F Da Sliva, Jingbo Li, Y. Yan, T. A. Gessert, and S. H. Wei*,  “Effect of Copassivation of Cl and Cu on CdTe Grain Boundaries”, Phys. Rev.  Lett. 101, 155501 (2008).

[84]H. J.  Xiang, S-. H. Wei*, J. L. F Da Sliva, and Jingbo Li*, “Enhanced alloy  solubility and band gap tenability in ternary InGaN nanowires”, Phys. Rev. B  78, 193301, (2008).

[85]Jingbo  Li*, S. H. Wei, S. S. Li, and J. B. Xia, “Origin of the doping bottleneck in  semiconductor quantum dots: A first-principles study”, Phys. Rev. B 77, 113304  (2008).

[86]H. W.  Peng and Jingbo Li*, “Quantum Confinement and Electronic Properties of Rutile  TiO2 Nanowires”, J. Phys. Chem. C 112, 20241 (2008).

[87]H. W.  Peng, Jingbo Li*, S. S. Li, and J. B. Xia, “First-Principles Study on Rutile  TiO2 Quantum Dots”, J. Phys. Chem. C 112, 13964 (2008).

[88]X. W.  Zhang, Jingbo Li*, S. S. Li, and J. B. Xia, “Electronic structure and optical  gain of wurtzite ZnO nanowires”, Appl. Phys. Lett. 92, 181101 (2008).

[89]P. Ma,  Y. Q. Gai, J. X. Wang, F. H. Yang, Y. P. Zeng, J. M. Li, Jingbo Li*,  “Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells  based on Mg-doped GaN annealed in O2”, Appl. Phys. Lett. 93, 102112 (2008).

[90]F. Wang,  Jingbo Li*, S. S. Li, J. B. Xia, and S.H.Wei, “Mg acceptor energy levels in  AlInGaN quaternary alloys”, Phys. Rev. B 77, 113202 (2008).

[91]Y. Q.  Gai, B. Yao*, Z. P. Wei, Y. F. Li, Y. M. Lu, D. Z. Shen, J. Y. Zhang, D. Z.  Zhao, X. W. Fan, Jingbo Li* and J. B. Xia, “Effect on nitrogen acceptor as Mg  is alloyed into ZnO”, Appl. Phys. Lett. 92, 062110 (2008).

[92]F. Wang,  H. Yu, Jingbo Li and Q. Hang, D. Zemlyanov, P. C. Gibbons, L. W. Wang, and W.  E Buhro*, “Spectroscopic properties of colloidal InP quantum wires”, J. Am.  Chem. Soc. 129, 14327 (2007).

[93]Q. Xu,  J. W. Luo, S. S. Li, J. B. Xai, Jingbo Li*, and S. H.Wei, “Chemical trends of  defect formation in Si quantum dots: The case of group-III and group-V  dopants”, Phys. Rev. B 75, 235304 (2007).

[94]F. Wang, S. S. Li, J. B.  Xai, H. X. Jiang, J. Y. Lin, Jingbo Li, and S. H.Wei*, “Effects of the wave  function localization in AlxInyGa1-x-yN quaternary alloys”, Appl. Phys.  Lett. 91, 061125 (2007).

知识产权

[1]  中国发明专利,一种ZnO半导体纳米材料墨水的制备方法,  授权号:ZL201310182777X

[2]  中国发明专利,一种焦绿石型氧化钨微米管的制备方法, 授权号:ZL2013100806850

[3]  中国发明专利,一种高取向性二硒化钨纳米线的制备方法, 授权号:ZL2012103745479

[4]  中国发明专利,一种锌基锑化物纳米结构的制备方法, 授权号:ZL2012103745801

[5]  中国发明专利,泡生法生长蓝宝石晶体的自动引晶方法, 授权号:ZL2012103743914

[6]  中国发明专利,一种采用双重控制技术生长蓝宝石晶体的方法, 授权号:ZL2012101968843

[7]  中国发明专利,一种染料敏化太阳能电池高效复合光阳极的制备方法, 授权号:ZL2011101546885

[8]  中国发明专利,一种用于制备LED芯片外延生长的纳米图形化衬底的方法, 授权号:ZL2011101534873

[9]  中国发明专利,一种纵向驱动应力阻抗力敏传感器探头, 授权号:ZL2011100922227

[10][10]中国发明专利,一种染料敏化太阳能电池复合电极的制备方法, 授权号:ZL2011100677225

[11]中国发明专利,纳米碳包覆的锂电池负极材料的制备方法, 授权号:ZL2010106194799

[12]中国发明专利,制备核壳结构的ZnO基上转换发光材料的方法, 授权号:ZL201010598487X

[13]中国发明专利,氮化镓系发光二极管, 授权号:ZL2010101576119

[14]中国发明专利,一种制备InAs室温铁磁性半导体材料的方法, 授权号:ZL2009102417009

[15]中国发明专利,一种提族氮化物中掺杂效率的方法, 授权号:ZL2009102416985

科研项目

[1]  半导体掺杂机制和纳米材料的研究, 国家自然科学基金委杰出青年基金, 200万,2009-2013,主持

[2]   Dirac  系统为代表的低维量子体系的新奇量子现象研究,国家科技部973项目,150万,2011-2016,子项目主持

[3]  高效氮化物  LED 材料及芯片关键技术, 国家863计划新材料领域重点项目,946万,2009-2012,首席科学家

[4]  宽带隙氧化物光电功能材料的基础研究,国家自然科学基金委重大研究计划培育项目,80万,2013-2015,主持

[5]  低维半导体光电器件创新国际团队,国家外国专家局,420万,2015-2016,主持